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APT20GS60KR(G)
600V, 30A, VCE(ON) = 2.8V Typical
Thunderbolt(R) High Speed NPT IGBT
The Thunderbolt HSTM series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt(R) series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET performance but lower cost. An extremely tight parameter distribution combined with a positive VCE(ON) temperature coefficient make it easy to parallel Thunderbolts HSTM IGBT's. Controlled slew rates result in very good noise and oscillation immunity and low EMI. The short circuit duration rating of 10s make these IGBT's suitable for motor drive and inverter applications. Reliability is further enhanced by avalanche energy ruggedness.
Features
* Fast Switching with low EMI * Very Low EOFF for Maximum Efficiency * Short circuit rated * Low Gate Charge * Tight parameter distribution * Easy paralleling * RoHS Compliant
Typical Applications
APT20GS60KR(G)
* ZVS Phase Shifted and other Full Bridge * Half Bridge * High Power PFC Boost * Welding * Induction heating * High Frequency SMPS
C G E
Absolute Maximum Ratings
Symbol I C1 I C2 I CM VGE SSOA EAS tSC Parameter Continuous Collector Current TC = @ 25C Continuous Collector Current TC = @ 100C Pulsed Collector Current 1 Gate-Emitter Voltage Switching Safe Operating Area Single Pulse Avalanche Energy 2 Short Circut Withstand Time 3 Rating 37 20 80 30V 80 115 10 mJ s V A Unit
Thermal and Mechanical Characteristics
Symbol PD RJC RCS TJ, TSTG TL WT Torque Parameter Total Power Dissipation TC = @ 25C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) Package Weight Mounting Torque, 6-32 M3 Screw Min -55 Typ 0.11 0.22 5.9 Max 180 0.70 150 300 10 1.1 Unit W C/W C
8-2007 052-6306 Rev A
oz g in*lbf N*m
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should be Followed.
Microsemi Website - http://www.microsemi.com
Static Characteristics
Symbol VBR(CES) VBR(ECS) Parameter
TJ = 25C unless otherwise specified
Test Conditions VGE = 0V, IC = 250A VGE = 0V, IC = 1A Reference to 25C, IC = 250A VGE = 15V IC = 20A TJ = 25C TJ = 125C Min 600 3 Typ 25 0.60 2.8 3.25 4 6.7 -
APT20GS60KR(G)
Max 3.15 5 25 1000 100 mV/C A nA V Unit V V/C
Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage
VBR(CES)/TJ Breakdown Voltage Temperature Coeff
VCE(ON)
Collector-Emitter On Voltage 4
VGE(th) Gate-Emitter Threshold Voltage VGE(th)/TJ Threshold Voltage Temp Coeff ICES IGES Zero Gate Voltage Collector Current Gate-Emitter Leakage Current
VGE = VCE, IC = 1mA VCE = 600V, VGE = 0V TJ = 25C TJ = 125C
VGE = 20V
Dynamic Characteristics
Symbols gfs Cies Coes Cres Co(cr) Co(er) Qg Qge Ggc td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Parameter Input Capacitance Output Capacitance
TJ = 25C unless otherwise specified
Test Conditions VCE = 50V, IC = 20A
Min -
Typ 12 1085 100 65 95 90
Max -
Unit S
Forward Transconductance
Reverse Transfer Capacitance Reverse Transfer Capacitance Charge Related 5 Reverse Transfer Capacitance Current Related 6 Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-On Switching Energy Turn-Off Switching Energy Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-On Switching Energy
8 9 8 9 10
VGE = 0V, VCE = 25V f = 1MHz
pF
VGE = 0V VCE = 0 to 400V
VGE = 0 to 15V IC = 20A, VCE = 300V
-
100 8 48 8 14 130 12 TBD 295 200 8 14 145 23 TBD 465 300
mJ ns mJ ns nC
Inductive Switching IGBT and Diode: TJ = 25C, VCC = 400V, IC = 20A RG = 9.1 7, VGG = 15V
Inductive Switching IGBT and Diode: TJ = 125C, VCC = 400V, IC = 20A RG = 9.1 7, VGG = 15V
-
Turn-Off Switching Energy 10
052-6306
Rev A
8-2007
TYPICAL PERFORMANCE CURVES
80 70 IC, COLLECTOR CURRENT (A) 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 VCE(ON), COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics
250s PULSE TEST<0.5 % DUTY CYCLE
VGE = 15V
80 70
APT20GS60KR(G)
T = 125C
J
VGE = 13 & 15V 11V
10V
TJ = 25C
IC, COLLECTOR CURRENT (A)
60 50 40 30 20 10 0
TJ = 125C
9V 8V
TJ = 150C
7V
6V
0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
80 70 60 50 40 30 20 10 0 0
5
IC, COLLECTOR CURRENT (A)
IC = 50A
4
TJ = 125C TJ = 25C
TJ = -55C
3
IC = 20A IC = 10A
2
1
2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
0
6
FIGURE 4, On State Voltage vs Gate-to- Emitter Voltage 16 VGE, GATE-TO-EMITTER VOLTAGE (V) 14 12 10 8 6 4 2 0 0 20 40 60 80 100 GATE CHARGE (nC) FIGURE 6, Gate Charge 120
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
5
4
IC = 40A IC = 20A IC = 10A
VCE = 120V
VCE = 300V
3
2
VCE = 480V
1
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
25 50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 5, On State Voltage vs Junction Temperature 2000 IC, DC COLLECTOR CURRENT(A) 1000
0
0
40
Cies
35 30 25 20 15 10 5 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 25
C, CAPACITANCE ( F)
P
100
052-6306
0 100 200 300 400 500 600 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 7, Capacitance vs Collector-To-Emitter Voltage
10
Rev A
Cres
8-2007
Coes
TYPICAL PERFORMANCE CURVES
10 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
180 160 140 120 100 80 60 40 20 RG = 9.1 0
L = 100H VCE = 400V VGE =15V,TJ=125C VGE =15V,TJ=25C
APT20GS60KR(G)
8 VGE = 15V 6
4
2 VCE = 400V
10 20 30 40 50 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 40 35 30 tr, RISE TIME (ns) 25 20 15 10 5 0 10 20 30 40 50 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 1400 EON2, TURN ON ENERGY LOSS (J) 1200 1000 800 600 400 200 0 EOFF, TURN OFF ENERGY LOSS (J)
= 400V V CE = +15V V GE R = 9.1
G
0
TJ = 25C, TJ =125C RG = 9.1 L = 100H
0
10 20 30 40 50 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 30 25 tf, FALL TIME (ns) 20 15 10 5 0
TJ = 125C, VGE = 15V
TJ = 25C, VGE = 15V
RG = 9.1, L = 100H, VCE = 400V
0
RG = 9.1, L = 100H, VCE = 400V TJ = 25 or 125C,VGE = 15V
0
0 10 20 30 40 50 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 700 600 500 400 300 200 100 0
TJ = 25C, VGE = 15V
= 400V V CE = +15V V GE R = 9.1
G
TJ = 125C,VGE =15V
TJ = 125C, VGE = 15V
TJ = 25C,VGE =15V
0 10 20 30 40 50 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 2000 SWITCHING ENERGY LOSSES (J)
= 400V V CE = +15V V GE T = 125C
J
0 10 20 30 40 50 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 1400 SWITCHING ENERGY LOSSES (J) 1200 1000 800 600 400 200 0
Eoff,10A Eon2,20A
= 400V V CE = +15V V GE R = 9.1
G
1500
Eon2,40A
Eon2,40A Eoff,40A
1000
Eoff,40A
8-2007
500
Eon2,20A Eoff,10A Eoff,20A
Eoff,20A Eon2,10A
Rev A
052-6306
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
Eon2,10A
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
TYPICAL PERFORMANCE CURVES
100
ICM
APT20GS60KR(G)
100
ICM
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
10
VCE(on)
10
VCE(on)
13s
100s 1ms
13s
100s 1ms 10ms
100ms
1
1
TJ = 150C TC = 25C
10ms 100ms DC line
0.1
TJ = 125C TC = 75C
DC line
1 10 100 800 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) Figure 17, Forward Safe Operating Area
0.1
Scaling for Different Case & Junction Temperatures: IC = IC(T = 25C)*(TJ - TC)/125
C
1 10 100 800 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) Figure 18, Maximum Forward Safe Operating Area
0.80 0.70
ZJC, THERMAL IMPEDANCE (C/W)
0.9
0.60 0.50 0.40 0.30
0.7
0.5
Note:
PDM
0.3
0.20 0.10 0 10-5
t1 t2
0.1 0.05
10-4
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
250 FMAX, OPERATING FREQUENCY (kHz)
200
TJ (C)
0.396 Dissipated Power (Watts) 0.00169 0.0602
TC (C)
0.305
150
T = 100C
C
ZEXT
100
T = 125C J T = 75C C D = 50 % = 400V V CE R = 9.1
G
T = 75C
C
Fmax = min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf fmax2 = Pdiss = Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
50
Figure 20, Transient Thermal Impedance Model
10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (A) Figure 21, Operating Frequency vs Collector Current
0
0
5
052-6306
Rev A
8-2007
APT20GS60KR(G)
Gate Voltage
APT15DQ60
10%
td(on) 90%
TJ = 125C Collector Current
V CC
IC
V CE
tr 5% Collector Voltage
5%
10%
A D.U.T.
Switching Energy
Figure 22, Inductive Switching Test Circuit
Figure 23, Turn-on Switching Waveforms and Definitions
Gate Voltage
90% td(off)
TJ = 125C Collector Voltage
90% tf
10%
0
Collector Current
Switching Energy
Figure 24, Turn-off Switching Waveforms and Definitions
FOOT NOTE: 1 2 3 4 5 6 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. Starting at TJ = 25C, L = 224H, RG = 25, IC = 20A Short circuit time: VGE = 15V, VCC 600V, TJ 150C Pulse test: Pulse width < 380s, duty cycle < 2% Co(cr) is defined as a fixed capacitance with the same stored charge as Coes with VCE = 67% of V(BR)CES. Co(er) is defined as a fixed capacitance with the same stored energy as Coes with VCE = 67% of V(BR)CES. To calculate Co(er) for any value of
Rev A
VCE less than V(BR)CES, use this equation: Co(er) = -3.43E-8/VDS^2 + 1.44E-8/VDS + 5.38E-11. 7 RG is external gate resistance, not including internal gate resistance or gate driver impedance (MIC4452). 8 Eon1 is the inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on switching loss. It is measured by clamping the inductance with a Silicon Carbide Schottky diode. 9 Eon2 is the inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on energy. 10 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6306
8-2007
APT20GS60KR(G)
TO-220 K Package Outline
e1 SAC: Tin, Silver, Copper
Collector
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
052-6306
Dimensions in Inches and (Millimeters)
Rev A
8-2007
Gate Collector Emitter

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